a,nov,2010 sot-89-3l 1. base 2. collector 3. emitter sot-89-3l plastic-encapsulate transistors 2sc4375 transistor (npn) features z small flat package z low collector- emitter saturation voltage maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =1ma,i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 30 v emitter-base breakdown voltage v (br)ebo i e =1ma,i c =0 5 v collector cut-off current i cbo v cb =30v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a dc current gain h fe v ce =2v, i c =500ma 100 320 collector-emitter saturation voltage v ce(sat) i c =1.5a,i b =30ma 2 v base-emitter voltage v be v ce =2v, i c =500ma 1 v transition frequency f t v ce =2v,i c =500ma 120 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz 40 pf classification of h fe rank o y range 100 C 200 160 C 320 marking go gy symbol parameter value unit v cbo collector-base voltage 30 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 5 v i c collector current 1.5 a p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 tiger electronic co.,ltd
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